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1

Nanowire Networks: Electronic Properties of Complex Self-Assembled InAs Nanowire Networks (Adv. Electron. Mater. 6/2016)

Heedt, Sebastian, Vakulov, Daniil, Rieger, Torsten, Rosenbach, Daniel, Trellenkamp, Stefan, Grützmacher, Detlev, Lepsa, Mihail Ion, Schäpers, Thomas

Journal:

Advanced Electronic Materials

Year:

2016

File:

PDF, 1.26 MB

2016

2

SPIE Proceedings [SPIE SPIE NanoScience + Engineering - San Diego, California, United States (Sunday 17 August 2014)] Spintronics VII - Spin injection and spin-orbit coupling in low-dimensional semiconductor nanostructures

Drouhin, Henri-Jean, Wegrowe, Jean-Eric, Razeghi, Manijeh, Heedt, Sebastian, Wehrmann, Isabel, Gerster, Thomas, Wenk, Paul, Kettemann, Stefan, Sladek, Kamil, Hardtdegen, Hilde, Bringer, Andreas, Schub

Year:

2014

Language:

english

File:

PDF, 10.20 MB

english, 2014

3

Determination of the electron saturation velocity in pseudomorphic AlxGa1-xAs/InyGa1-yAs MODFETs at 300 and 100 K

Dickmann, J., Heedt, C.H., Daembkes, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 502 KB

english, 1989

4

Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer

Heedt, C., Buchali, F., Prost, W., Brockerhoff, W., Fritzsche, D., Nickel, H., Losch, R., Schlapp, W., Tegude, F.-J.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 605 KB

english, 1994

5

InP-based heterostructure field-effect transistors with high-quality short-period (InAs)3m/(GaAs)1m superlattice channel layers

U. Auer, R. Reuter, C. Heedt, W. Prost, F.J. Tegude

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 369 KB

english, 1995

6

Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures

H. Künzel, J. Böttcher, A. Hase, C. Heedt, H. Hoenow

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 370 KB

english, 1993

7

Nonlinear Effects in the 1/f Noise of a 2D Electron Gas

Mihaila, Mihai N., Scheffer, Frank, Heedt, Christian, Tegude, Franz-Josef

Journal:

IFAC Proceedings Volumes

Year:

2001

Language:

english

File:

PDF, 720 KB

english, 2001

8

Highly strained In0.5Ga0.5P as wide-gap material on InP substrate for heterojunction field effect transistor application

F. Scheffer, A. Lindner, Q. Liu, C. Heedt, R. Reuter, W. Prost, H. Lakner, F.J. Tegude

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 581 KB

english, 1994

9

[IEEE 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - Santa Barbara, CA, USA (27-31 March 1994)] Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - In/sub 0.5/Ga/sub 0.5/P spacer layer for high drain breakdown voltage InGaAs/InAlAs HFET on InP grown by MOVPE

Scheffer, F., Lindner, A., Heedt, C., Reuter, R., Liu, Q., Prost, W., Tegude, F.J.

Year:

1994

Language:

english

File:

PDF, 329 KB

english, 1994

10

Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

Kammermeier, Michael, Wenk, Paul, Schliemann, John, Heedt, Sebastian, Schäpers, Thomas

Journal:

Physical Review B

Year:

2016

Language:

english

File:

PDF, 1.16 MB

english, 2016

11

[IEEE Seventh International Conference on Indium Phosphide and Related Materials - Hokkaido, Japan (9-13 May 1995)] Seventh International Conference on Indium Phosphide and Related Materials - The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistors

Auer, U., Reuter, R., Ellrodt, P., Heedt, C., Prost, W., Tegude, F.J.

Year:

1995

Language:

english

File:

PDF, 379 KB

english, 1995

12

Impact of Tunnel-Barrier Strength on Magnetoresistance in Carbon Nanotubes

Morgan, Caitlin, Misiorny, Maciej, Metten, Dominik, Heedt, Sebastian, Schäpers, Thomas, Schneider, Claus M., Meyer, Carola

Journal:

Physical Review Applied

Year:

2016

Language:

english

File:

PDF, 1.31 MB

english, 2016

13

[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - Spintronics with semiconductor nanowires

Schapers, Thomas, Heedt, Sebastian, Bringer, Andreas, Otto, Isabel, Sladek, Kamil, Hardtdegen, Hilde, Grutzmacher, Detlev, Prost, Werner

Year:

2016

Language:

english

File:

PDF, 19 KB

english, 2016

14

Transmission phase read-out of a large quantum dot in a nanowire interferometer

Borsoi, Francesco, Zuo, Kun, Gazibegovic, Sasa, Op het Veld, Roy L. M., Bakkers, Erik P. A. M., Kouwenhoven, Leo P., Heedt, Sebastian

Journal:

Nature Communications

Year:

2020

File:

PDF, 1.05 MB

2020

15

[IEEE International Conference on Microelectronics - Nis, Serbia (12-14 Sept. 1995)] Proceedings of International Conference on Microelectronics - Relaxation mechanisms in 2D electron gas and origin of 1/f noise in HEMT's

Mihaila, M., Heedt, C., Tegude, F.G.

Year:

1995

Language:

english

File:

PDF, 618 KB

english, 1995

16

Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET

F. Buchali, C. Heedt, W. Prost, I. Gyuro, H. Meschede, F.J. Tegude

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 232 KB

english, 1992

17

Ballistic Transport and Exchange Interaction in InAs Nanowire Quantum Point Contacts

Heedt, S., Prost, W., Schubert, J., Grützmacher, D., Schäpers, Th.

Journal:

Year:

2016

Language:

english

File:

PDF, 4.23 MB

english, 2016

18

[IEEE 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) - Toulouse, France (2016.10.9-2016.10.12)] 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) - Ballistic and spin transport in InAs nanowires

Schapers, Th., Heedt, S., Bringer, A., Hardtdegen, H., Schubert, J., Grutzmacher, D., Kammermeier, M., Wenk, P., Schliemann, J., Prost, W.

Year:

2016

Language:

english

File:

PDF, 163 KB

english, 2016

19

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

Kammermeier, Michael, Wenk, Paul, Schliemann, John, Heedt, Sebastian, Gerster, Thomas, Schäpers, Thomas

Journal:

Physical Review B

Year:

2017

Language:

english

File:

PDF, 742 KB

english, 2017

20

Amphoteric Nature of Sn in CdS Nanowires

Zhang, Mengyao, Wille, Marcel, Röder, Robert, Heedt, Sebastian, Huang, Liubing, Zhu, Zheng, Geburt, Sebastian, Grützmacher, Detlev, Schäpers, Thomas, Ronning, Carsten, Lu, Jia Grace

Journal:

Year:

2014

Language:

english

File:

PDF, 3.35 MB

english, 2014

21

[IEEE Third International Conference Indium Phosphide and Related Materials - Cardiff, UK (8-11 April 1991)] [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials - Material characterisation of InGaAs/InAlAs heterostructure field effect transistors with heavily doped n-type InAlAs donor layer

Heedt, C., Gottwald, P., Prost, W., Tegude, F.J., Kunzel, H., Dickmann, J., Dambkes, H.

Year:

1991

Language:

english

File:

PDF, 250 KB

english, 1991

22

[IEEE LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Newport, RI, USA (21-24 April 1992)] LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - On the optimization and reliability of ohmic and Schottky contacts to InAlAs/InGaAs HFET

Heedt, C., Gottwald, P., Buchali, F., Prost, W., Kunzel, H., Tegude, F.J.

Year:

1992

File:

PDF, 216 KB

1992

23

[AIP The sixth Van der Zielsymposium on quantum 1/f noise and other low frequency fluctuations in electronic devices - St. Louis, Missouri (USA) (27−28 May 1994)] AIP Conference Proceedings - Nonlinear effects in the 1/f noise of lattice-matched InAlAs/InGaAs HEMT’s

Mihaila, M., Heedt, C., Tegude, F. J.

Year:

1996

Language:

english

File:

PDF, 300 KB

english, 1996

24

High breakdown voltage InGaAs/InAlAs HFET using In0.5Ga0.5P spacer layer

Prost, W., Reuter, R., Liu, Q., Heedt, C., Tegude, F.J., Lindner, A., Scheffer, F.

Journal:

Electronics Letters

Year:

1994

Language:

english

File:

PDF, 223 KB

english, 1994

25

Confinement and inhomogeneous broadening effects in the quantum oscillatory magnetization of quantum dot ensembles

Herzog, F, Heedt, S, Goerke, S, Ibrahim, A, Rupprecht, B, Heyn, Ch, Hardtdegen, H, Schäpers, Th, Wilde, M A, Grundler, D

Journal:

Journal of Physics Condensed Matter

Year:

2016

Language:

english

File:

PDF, 843 KB

english, 2016

26

The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAl As/InGaAs heterostructure field-effect transistors

U. Auer, R. Reuter, P. Ellrodt, C. Heedt, W. Prost, F. J. Tegude

Journal:

Microwave and Optical Technology Letters

Year:

1996

Language:

english

File:

PDF, 420 KB

english, 1996

27

Effects and post-effects of two-hour exhausting exercise on composition and gas transport functions of blood

D. Böning, W. Skipka, P. Heedt, W. Jenker, U. Tibes

Journal:

European Journal of Applied Physiology

Year:

1979

Language:

english

File:

PDF, 370 KB

english, 1979

28

Crystal phase transformation in self-assembled InAs nanowire junctions on patterned Si substrates

Rieger, Torsten, Rosenbach, Daniel, Vakulov, Daniil, Heedt, Sebastian, Schaepers, Thomas, Grützmacher, Detlev, Lepsa, Mihail Ion

Journal:

Year:

2016

Language:

english

File:

PDF, 10.16 MB

english, 2016

29

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

Jekat, Felix, Pestka, Benjamin, Car, Diana, GazibegoviÄ, SaÅ¡a, FlÃ¶hr, Kilian, Heedt, Sebastian, Schubert, JÃ¼rgen, Liebmann, Marcus, Bakkers, Erik P. A. M., SchÃ¤pers, Thomas, Morgenstern, Markus

Journal:

Applied Physics Letters

Year:

2020

File:

PDF, 2.09 MB

2020

30

Resolving ambiguities in nanowire field-effect transistor characterization

Heedt, Sebastian, Otto, Isabel, Sladek, Kamil, Hardtdegen, Hilde, Schubert, Jürgen, Demarina, Natalia, Lüth, Hans, Grützmacher, Detlev, Schäpers, Thomas

Journal:

Year:

2015

Language:

english

File:

PDF, 3.95 MB

english, 2015

31

Frequency anomaly in the Rashba-effect induced magnetization oscillations of a high-mobility two-dimensional electron system

Rupprecht, B., Heedt, S., Hardtdegen, H., Schäpers, Th., Heyn, Ch., Wilde, M. A., Grundler, D.

Journal:

Physical Review B

Year:

2013

Language:

english

File:

PDF, 525 KB

english, 2013

32

Electronic Properties of Complex Self-Assembled InAs Nanowire Networks

Heedt, Sebastian, Vakulov, Daniil, Rieger, Torsten, Rosenbach, Daniel, Trellenkamp, Stefan, Grützmacher, Detlev, Lepsa, Mihail Ion, Schäpers, Thomas

Journal:

Advanced Electronic Materials

Year:

2016

Language:

english

File:

PDF, 6.84 MB

english, 2016

33

Parity transitions in the superconducting ground state of hybrid InSb–Al Coulomb islands

Shen, Jie, Heedt, Sebastian, Borsoi, Francesco, van Heck, Bernard, Gazibegovic, Sasa, Op het Veld, Roy L. M., Car, Diana, Logan, John A., Pendharkar, Mihir, Ramakers, Senja J. J., Wang, Guanzhong, Xu,

Journal:

Nature Communications

Year:

2018

File:

PDF, 2.84 MB

2018

34

Low-temperature MBE of AlGaInAs lattice-matched to InP

H. Künzel, J. Böttcher, R. Gibis, H. Hoenow, C. Heedt

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 348 KB

english, 1993

35

[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - Origin of 1/f noise in InAlAs/InGaAs HEMTs

Mihaila, M., Heedt, C., Scheffer, F., Tegude, F.J.

Year:

1996

Language:

english

File:

PDF, 351 KB

english, 1996

36

Electrical properties of lightly Ga-doped ZnO nanowires

Alagha, Shima, Heedt, Sebastian, Vakulov, Daniel, Mohammadbeigi, Faezeh, Kumar, E S, Schaepers, Thomas, Isheim, Dieter, Watkins, Simon P, Kavanagh, Karen L

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 2.37 MB

english, 2017

37

Electrical Spin Injection into InN Semiconductor Nanowires

Heedt, S., Morgan, C., Weis, K., Bürgler, D. E., Calarco, R., Hardtdegen, H., Grützmacher, D., Schäpers, Th.

Journal:

Year:

2012

Language:

english

File:

PDF, 4.15 MB

english, 2012

38

Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE

H. Künzel, W. Passenberg, J. Böttcher, C. Heedt

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 241 KB

english, 1991

39

[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - Characterization of impact-ionization in InAlAs/InGaAs/InP HEMT structures using a novel photocurrent-measurement technique

Heedt, C., Buchali, F., Prost, W., Fritzsche, D., Nickel, H., Tegude, F.J.

Year:

1993

Language:

english

File:

PDF, 305 KB

english, 1993

40

[IEEE LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Newport, RI, USA (21-24 April 1992)] LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Evidence of oxygen in undoped InAlAs MOVPE layers

Buchali, F., Scheffer, F., Heedt, C., Gyuro, I., Speier, P., Prost, W., Tegude, F.J.

Year:

1992

File:

PDF, 216 KB

1992

41

Adiabatic Edge Channel Transport in a Nanowire Quantum Point Contact Register

Heedt, S., Manolescu, A., Nemnes, G. A., Prost, W., Schubert, J., Grützmacher, D., Schäpers, Th.

Journal:

Year:

2016

Language:

english

File:

PDF, 4.52 MB

english, 2016

42

Signatures of interaction-induced helical gaps in nanowire quantum point contacts

Heedt, S., Traverso Ziani, N., Crépin, F., Prost, W., Trellenkamp, St., Schubert, J., Grützmacher, D., Trauzettel, B., Schäpers, Th.

Journal:

Year:

2017

Language:

english

File:

PDF, 914 KB

english, 2017

43

Room-temperature deposition of SiNx using ECR-PECVD for IIIV semiconductor microelectronics in lift-off technique

A. Wiersch, C. Heedt, S. Schneiders, R. Tilders, F. Buchali, W. Kuebart, W. Prost, F.J. Tegude

Journal:

Journal of Non-Crystalline Solids

Year:

1995

Language:

english

File:

PDF, 382 KB

english, 1995

44

[IEEE 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - Santa Barbara, CA, USA (27-31 March 1994)] Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - InAlAs/InGaAs HFET with extremely high device breakdown using an optimized buffer layer structure

Auer, U., Reuter, R., Heedt, C., Kunzel, H., Prost, W., Tegude, F.J.

Year:

1994

Language:

english

File:

PDF, 341 KB

english, 1994

45

Selectivity map for molecular beam epitaxy of advanced III-V quantum nanowire networks

Aseev, Pavel, Fursina, Alexandra, Boekhout, Frenk, Krizek, Filip, Sestoft, Joachim E., Borsoi, Francesco, Heedt, Sebastian, Wang, Guanzhong, Binci, Luca, Martí-Sánchez, Sara, Swoboda, Timm, Koops, Ren

Journal:

Year:

2018

Language:

english

File:

PDF, 1.50 MB

english, 2018

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